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Nd掺杂对ZnO薄膜结构及室温光致发光特性的影响
引用本文:文军,陈长乐.Nd掺杂对ZnO薄膜结构及室温光致发光特性的影响[J].四川大学学报(自然科学版),2008,45(6):1436-1440.
作者姓名:文军  陈长乐
作者单位:1. 西北工业大学应用物理系,西安,710072;渭南师范学院物理系,渭南,714000
2. 西北工业大学应用物理系,西安,710072
基金项目:国家自然科学基金重点资助项目(50331040)
摘    要:通过射频磁控溅射技术在Si(111)衬底上制备了不同含量的Nd掺杂ZnO薄膜.XRD和AFM分析表明,Nd掺杂没有改变ZnO薄膜的结构,薄膜为纳米多晶结构,未掺杂ZnO沿c择优生长.Nd掺杂使ZnO薄膜表面粗糙,起伏较大,薄膜中随Nd掺杂量的增加颗粒减小.室温光致发光谱显示,薄膜出现了395nm的强紫光峰和495nm的弱绿光峰,同时,Nd掺杂不改变PL谱的峰位置,Nd含量对PL谱的峰强度产生了一定影响.

关 键 词:Nd掺杂  ZnO薄膜  射频磁控溅射  光致发光

Effect of neodymium content on structure and RT photoluminescence properties of doped ZnO thin films
WEN Jun and CHEN Chang-Le.Effect of neodymium content on structure and RT photoluminescence properties of doped ZnO thin films[J].Journal of Sichuan University (Natural Science Edition),2008,45(6):1436-1440.
Authors:WEN Jun and CHEN Chang-Le
Institution:Department of Applied Physics, School of Science, Northwestern Polytechnical University;Department of Physics, Weinan Teachers University;Department of Applied Physics, School of Science, Northwestern Polytechnical University
Abstract:The no-doped ZnO thin film and Nd-doped ZnO thin films were deposited on Si(111) substrate by RF magnetron sputtering.As analyzed by XRD and AFM,the structure of the thin films was not disturbed by Nd-doping and the thin films were nano-multi-crystal thin films.The no-doped ZnO thin films had high c-axis orientation.The surface morphology of Nd-doped ZnO thin films were roughness and the grain diameter of the thin films were decrease with the increase of the neodymium contents.The room temperature Photolumi...
Keywords:Nd-doped  ZnO thin film  RF magnetron sputtering  photoluminescence  
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