CdGeAs2多晶合成研究

以高纯(6N)Cd、Ge和As单质为原料,按CdGeAs_2的化学计量比配料,采用机械振荡和温度振荡相结合新方法合成出CdGeAs_2多晶锭,经X射线粉末衍射分析表明合成产物为高纯单相的CdGeAs_2多晶.用20℃/min的升温和降温速率对合成的CdGeAs_2多晶进行了DTA分析,结果显示CdGeAs_2多晶的熔化温度为669.24℃、结晶温度为615.55℃.根据DTA分析结果设计CdGeAs_2晶体生长温场,采用改进的Bridgman法生长出外观完整、尺寸为φ15 mm×45 mm的CdGeAs_2晶体,并对其进行解理实验,获得了完整、光滑的解理面,经XRD分析结果显示,连扫谱呈现(101)面的四级衍射峰,(101)面回摆谱峰尖锐、对称性好.

Study of polycrystalline synthesis CdGeAs2

Using high pure (6N) elements of cadmium (Cd), germanium (Ga) and arsenic (As) as the raw material, in the chemistry ratio of CdGeAs_2, a CdGeAs_2 polycrystalline ingot with high mass density was synthesized by mechanical and temperature oscillation method. The X-ray diffraction (XRD) on the ingot showed that the ingot is high pure and single phase CdGeAs_2 polycrystalline. The melting and crystallizing temperatures of CdGeAs_2 polycrystalline from DTA curve at heating and cooling rates of 20 ℃/min were 669.24 ℃ and 615.55 ℃ respectively. On the basis of datum from the DTA, a temperature field of the CdGeAs_2 crystal growth was designed. A good integrity CdGeAs_2 single crystal with size of φ15 mm×45 mm was grown by the modified Bridgman method. The cleavage test on the crystal was carried out by a single edge blade. An integral smooth cleavage face was obtained. It is found from the result of XRD analysis that the cleavage face is the face of (101), the four-order diffraction peaks of the {101} faces are appeared and the rocking spectrum peak of the (101)face shows itself sharp and good symmetry.