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a-Si:H的光电导衰退与微结构的关系
引用本文:魏爱香,周心明,冯良桓,郑家贵,蔡伯埙,谢蕙.a-Si:H的光电导衰退与微结构的关系[J].四川大学学报(自然科学版),1989(4).
作者姓名:魏爱香  周心明  冯良桓  郑家贵  蔡伯埙  谢蕙
作者单位:四川大学材料科学系 (魏爱香,周心明,冯良桓,郑家贵,蔡伯埙),四川大学分析测试中心(谢蕙)
摘    要:目前,主要流行的两类微观机制模型——“负有效相关能模型”和“断键模型”——都表明a-Si:H的光诱导变化与其微观结构有关.本文研究了不同制备工艺条件对a-Si:H微结构的影响,和样品的光电导衰退依赖于微结构的关系.最后,从S—W效应的微观机制作了简短讨论.


THE RELATION BETWEEN THE LIGHT-INDUCED DEGRADATION OF PHOTOCONDUCTIVITY AND THE MICROSTRUCTURE IN a-Si:H FILMS
Wei Aixiang Zhou Xinming Feng Lianghuan Zheng Jiagui Cai Boxun.THE RELATION BETWEEN THE LIGHT-INDUCED DEGRADATION OF PHOTOCONDUCTIVITY AND THE MICROSTRUCTURE IN a-Si:H FILMS[J].Journal of Sichuan University (Natural Science Edition),1989(4).
Authors:Wei Aixiang Zhou Xinming Feng Lianghuan Zheng Jiagui Cai Boxun
Institution:Wei Aixiang Zhou Xinming Feng Lianghuan Zheng Jiagui Cai Boxun (Department of Material Science)Xie Hui (Analytical and Testing Center)
Abstract:We have studied the light-induced degradation of photocenductivity in undoped a-Si: H films and analysed their microstructure by infrared vibraticnal absorption spectra. The experim ental results have shwon that the increase of substrate temperature result in the decrease of the microstructure in a-Si: H films but the effect of the discharge powers is not obvious. The degradation of photoconductivity in a-Si: H films has concern with their microstn.cture during the initial Stage of light exposure. Lastly, the results are triefly aiscussed by the niicicseoprical mechanism of
Keywords:amorphous silicon  photoconduct  light-induced change  microstructore  
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