| 用MOCVD法制备TiO2薄膜 |
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| 引用本文： | 崔丽萍,张建明.用MOCVD法制备TiO2薄膜[J].太原理工大学学报,2003,34(2):222-225. |
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| 作者姓名： | 崔丽萍 张建明 |
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| 作者单位： | 太原理工大学,化学工程与技术学院,山西,太原,030024 |
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| 摘 要： | 用低压MOCVD法，以四异丙纯钛为源物质，高纯氮气作为载气，氧气为反应气体，制备出了TiO2薄膜，考察出了沉积温度，基片距离均对沉积速率有影响，发现在不同反应条件下TiO2薄膜生长行为受动力学控制或受扩散控制。
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| 关 键 词： | MOCVD TiO2薄膜 二氧化钛薄膜 化学气相沉积 制备方法 |
| 文章编号： | 1007-9432(2003)02-0222-04 |
| 修稿时间： | 2002年9月16日 |
TiO2 Thin Film Prepared with MOCVD |
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| CUI Li ping,ZHANG Jian ming.TiO2 Thin Film Prepared with MOCVD[J].Journal of Taiyuan University of Technology,2003,34(2):222-225. |
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| Authors: | CUI Li ping ZHANG Jian ming |
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| Abstract: | That TiO 2 thin films prepared by MOCVD have been studied in this paper. Nitrogen was used as carrier gas for the titanium precursor,and oxygen was used as recant gas .The deposition temerperature and substrate distance effect on deposition rate was observed.Depend on different process parameters,the film growth behavior is kinetically controlled by dispersion .The better condition for preparing high quality TiO 2 thin films is found. |
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| Keywords: | TiO 2 thin film MOCVD |
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