| SiNxHy／SiO2氢离子敏器件及其特性 |
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| 引用本文： | 钟雨乐,赵守安.SiNxHy／SiO2氢离子敏器件及其特性[J].暨南大学学报,1992,13(3):39-43. |
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| 作者姓名： | 钟雨乐 赵守安 |
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| 作者单位： | 暨南大学电子工程系，暨南大学电子工程系，暨南大学电子工程系 |
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| 基金项目： | 国务院侨办重点学科科研基金资助项目 |
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| 摘 要： |
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| 关 键 词： | PECVD 氢离子敏器件 敏感膜 |
SiN_xH_y/SiO_2 H~+-ISFET AND HIS CHARACTERISTICS |
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| Zhong Yule Zhao Shouan Luo Huoyou.SiN_xH_y/SiO_2 H~+-ISFET AND HIS CHARACTERISTICS[J].Journal of Jinan University(Natural Science & Medicine Edition),1992,13(3):39-43. |
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| Authors: | Zhong Yule Zhao Shouan Luo Huoyou |
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| Institution: | Dept.of Electronic Engineering |
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| Abstract: | A new H~+ -ISFET is prctented.The silicon nitride(SiN_xH_y)film deposited by PECVD technique plays both scnsitive and second passivation actions.The SiN_xH_y film posseses thicker content of hydrogen.Sensitivity of device is 56-60mV/pH and higher to 14% than the Si_3N_4 film deposited by LPCVD.Linear characteristics of sentitivity and hermetically-scaled property of the device are improved. |
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| Keywords: | plasma-enhanced chemical vapour deposition direct-gate FET Nerst response |
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