| β-FeSi_2半导体薄膜的研究进展 |
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| 引用本文： | 周幼华,童恒明,乔燕.β-FeSi_2半导体薄膜的研究进展[J].江汉大学学报(自然科学版),2007,35(2):26-29. |
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| 作者姓名： | 周幼华 童恒明 乔燕 |
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| 作者单位： | 1. 江汉大学,物理与信息工程学院,武汉,430056
2. 武汉市东西湖区教育局,武汉,430040 |
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| 基金项目： | 自然科学基金(10604018)，高等学校博士学科点专项科研基金(20060487006) |
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| 摘 要： | 综述了半导体β-FeSi2薄膜的制备、薄膜的表征、能带的特点、电学、光学性质等方面的研究进展,讨论了几种用于Si衬底上外延生长β-FeSi2薄膜方法的优缺点,分析了制备高品质β-FeSi2薄膜所存在的理论和技术上的难题,展望了β-FeSi2薄膜作为新光电材料的应用前景.
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| 关 键 词： | β-FeSi2 半导体薄膜 Si基发光 |
| 文章编号： | 1673-0143（2007）02-0026-04 |
| 修稿时间： | 2007-01-16 |
Development of Investigation of β-FeSi2 Thin Films |
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| ZHOU You-hua,TONG Heng-ming,QIAO Yan.Development of Investigation of β-FeSi2 Thin Films[J].Journal of Jianghan University:Natural Sciences,2007,35(2):26-29. |
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| Authors: | ZHOU You-hua TONG Heng-ming QIAO Yan |
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| Institution: | 1. School of Physics and Information Engineering, Jinghan University, Wuhan 430056, China; 2. Education Bureau of Dongxi Lake District, Wuhan 430040, China |
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| Abstract: | Reviewes the investigation of synthesize of β-FeSi2 thin films and its characteristic are present;Summarizes some processes for β-FeSi2 thin film to be grown epitaxially on Si substra-tes.Analyses the theoretical and technological problem on the preparation of β-FeSi2 thin film,pro-spects the application of β-FeSi2 thin film as a new photoelectric material. |
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| Keywords: | β-FeSi2 semiconducting thin film Si-base luminescence |
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