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Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure |
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| Authors: | YuPeng An Ting Mei JingHua Teng ChengDong Xu YiDing Wang |
| Institution: | 1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China; 2 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore; 3 Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore |
| Abstract: | Built-in electric field may enhance or retard the impurity-free vacancy disordering (IFVD) during rapid thermal annealing (RTP) by imposing a drift on charged point defects. Built-in electric field is at the interface between dielectric layer and top layer of the structure. Subsequent rapid thermal annealing leads to different intermixing results due to different field directions on InP cap layers in different doping types. Experimental results also show different influences of the built-in field on the two... |
| Keywords: | impurity-free vacancy disordering point defects built-in electric field |
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