Investigation of silicon on insulator fabricated by two-step O+ implantation |
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| Authors: | Xing Wei ZhongYing Xue AiMin Wu Xiang Wang XianYuan Li Fei Ye Jie Chen Meng Chen Bo Zhang ChengLu Lin Miao Zhang Xi Wang |
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| Institution: | 1. State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
2. Shanghai Simgui Technology Company Limited, Shanghai, 201821, China
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| Abstract: | In this paper, we investigated the dose window of forming a continuous buried oxide (BOX) layer by single implantation at the implantation energy of 200 keV. Then, an improved two-step implantation process with second implantation dose of 3×1015 cm?2 was developed to fabricate high quality separation by implanted oxygen (SIMOX) silicon on insulator (SOI) wafers. Compared with traditional single implantation, the implantation dose is reduced by 18.2%. In addition, the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy, indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy. |
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