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A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time |
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| Authors: | Yu Wang ;Zongliang Huo ;Huamin Cao ;Ting Li ;Jing Liu ;Liyang Pan ;Xing Zhang ;Yun Yang ;Shenfeng Qiu ;Hanming Wu ;Ming Liu |
| Institution: | [1]Laboratory of Nano-fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; [2]Institute of Microelectronics, Tsinghua University,Beijing 100083, China; [3]Institute of Microelectronics, Peking University, Beijing 100871,China; [4]Semiconductor Manufacturing International Corporation,Shanghai 201203, China |
| Abstract: | NOR floating-gate flash memory 65-nm process Giga bit size Access time Circuit design |
| Keywords: | NOR floating-gate flash memory 65-nm process Giga bit size Access time Circuit design |
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