A review of GaN-based optoelectronic devices on silicon substrate

Group III-nitride material system possesses some unique properties, such as large spectrum coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation velocity, high electrical breakdown field, and strong polarization effect, which enables the big family has a very wide application range from optoelectronic to power electronic area. Furthermore, the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization, because of the cost-effective device fabrication on the platform of Si-based integrated circuits. In this article, the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized, in which some key issues regarding to the material growth and device fabrication were reviewed.