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溅射时间对掺镓氧化锌透明导电薄膜特性的影响
引用本文:钟志有,周金,杨玲玲.溅射时间对掺镓氧化锌透明导电薄膜特性的影响[J].中南民族大学学报(自然科学版),2011,30(3).
作者姓名:钟志有  周金  杨玲玲
作者单位:中南民族大学电子信息工程学院,武汉,430074
基金项目:湖北省自然科学基金资助项目(2009CDB166); 中央高校基本科研业务费专项资金项目资助(CZZ11001); 中南民族大学研究生创新基金资助项目(chxxyz110107)
摘    要:采用射频磁控溅射方法在玻璃衬底上沉积掺镓氧化锌(GZO)透明导电薄膜,通过X射线衍射仪(XRD)、分光光度计和四探针仪等测试分析,研究了溅射时间对薄膜的晶体结构、光学和电学性能的影响.结果表明:GZO薄膜的性能与溅射时间密切相关.所制备的GZO薄膜均具有良好的c轴择优取向,可见光波段的平均透过率均高于87.97%;溅射时间越长,薄膜厚度越大,相应的晶粒尺寸减小,同时衍射峰强度呈现出先增大再减小的变化趋势,当溅射时间为25 min时,GZO薄膜的衍射峰强度最大,对应的电阻率最小(1.05×10-3Ω.cm).

关 键 词:掺镓氧化锌  透明导电薄膜  光电特性

Effects of Sputtering Time on Structural,Optical and Electrical Properties of Gallium-Doped Zinc Oxide Films
Zhong Zhiyou,Zhou Jin,Yang Lingling.Effects of Sputtering Time on Structural,Optical and Electrical Properties of Gallium-Doped Zinc Oxide Films[J].Journal of South-Central Univ for,2011,30(3).
Authors:Zhong Zhiyou  Zhou Jin  Yang Lingling
Institution:Zhong Zhiyou,Zhou Jin,Yang Lingling(College of Electronic Information Engineering,South-Central University for Nationalities,Wuhan 430074,China)
Abstract:Gallium-doped zinc oxide(GZO) thin films were deposited with various sputtering time by Radio Frequency(RF) magnetron sputtering method.The structural,optical and electrical properties of GZO films were investigated by X-ray diffraction(XRD),spectrophotometer and four-probe meter,respectively.The results show that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the(002) direction,the average transmittance is higher than 87.97 % in the visible light r...
Keywords:gallium-doped zinc oxide  transparent conductive films  optical and electrical properties  
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