基体温度和氩气压强对射频磁控溅射制备GZO薄膜性能的影响

采用射频磁控溅射方法,用Ga2O3含量为1%的ZnO做靶材,在不同基体温度和不同溅射压强的条件下制备了高质量的GZO透明导电薄膜.结果表明:基体温度和氩气压强对GZO薄膜的晶体结构、光电性能有较大影响.当温度为500℃,溅射气压为0.2Pa时制备的GZO薄膜光电性能较优,方块电阻为7.8Ω/□,电阻率为8.58×10-4Ω.cm,可见光的平均透过率为89.1%.

Influences of Substrate Temperature and Argon Pressure on Properties of GZO Thin Films Prepared by Radio Frequency Magnetron Sputtering

High-quality Ga doped ZnO（GZO） thin films were prepared by radio frequency magnetron sputtering at different substrate temperature and Argon pressure by sputtering a GZO target with 1wt. % Ga2O3. The results show that substrate temperature and Argon pressure strongly affects crystal structure and photoelectric properties of GZO thin films. The GZO thin film deposited at substrate temperature of 500℃, a sputtering gas pressure of 0.2 Pa is the best performances as follows： square resistance is 7.8Ω/ , resistivity is 8.58 × 10^ -4Ω · cm, and average visible transmittance is 89.1%.