| Al掺杂对ZnO薄膜晶体结构的影响 |
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| 引用本文： | 代红丽,秦云.Al掺杂对ZnO薄膜晶体结构的影响[J].天津理工大学学报,2008,24(4). |
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| 作者姓名： | 代红丽 秦云 |
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| 作者单位： | 1. 天津理工大学电子信息与通信工程学院,天津,300191
2. 西北大学信息科学与技术学院,西安,710069 |
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| 摘 要： | 采用溶胶-凝胶工艺在Si(111)衬底上制备了ZnO薄膜,利用X射线衍射仪对薄膜的晶体结构进行了分析讨论.结果表明,当掺杂量Al3 浓度增大时,晶体产生的张应力使晶格常数变大,衍射峰向小角度方向移动;相反,当Al3 浓度减小时,压应力使衍射峰向大角度方向移动.
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| 关 键 词： | ZnO薄膜 溶胶-凝胶法 晶体结构 |
Effects of the impurity concentration of Al to ZnO crystal structure |
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| DAI Hong-li,QIN Yun.Effects of the impurity concentration of Al to ZnO crystal structure[J].Journal of Tianjin University of Technology,2008,24(4). |
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| Authors: | DAI Hong-li QIN Yun |
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| Abstract: | ZnO thin films were prepared on Si(111)substrates by the sol-gel process.The crystal structure of the thin films were analyzed by XRD.The results revealed that,the constant of crystal lattice was larger as the concentration of Al3 increasing because of tensile strength,and the diffraction peak was moved to smaller angle;To the opposite,the diffraction peak was moved to bigger angle as the concentration of Al3 decreasing because of pressured strength. |
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| Keywords: | ZnO thin films sol-gel process crystal structure |
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