| 埋氧层及铝层对SOI／玻璃静电键合的影响 |
| |
| 引用本文： | 郑志霞.埋氧层及铝层对SOI／玻璃静电键合的影响[J].莆田高等专科学校学报,2012(5):70-74. |
| |
| 作者姓名： | 郑志霞 |
| |
| 作者单位： | 莆田学院电子信息工程系,福建莆田351100 |
| |
| 基金项目： | 国家国际合作基金资助项目（对俄合作项目,2011DFR11160）;福建省高校产学研合作重大基金资助项目（3502220103012）;莆田市自然科学基金区域重大基金项目（2010G03） |
| |
| 摘 要： | 介绍了SOI／Pyrex玻璃静电键合的实验过程和实验现象，利用电流表对静电键合电流进行测量。发现埋氧层厚度越厚，键合电流越小，键合波扩散速度越小。提高键合电压，能有效增大键合电流及加快键合速度。实验也表明玻璃表面溅射铝层对键合产生较大影响。理论分析了产生这些现象的原因，得出埋氧层厚度和键合电压与静电力的关系式。还提出从阳极引一探针电极到SOI器件层，提高玻璃耗尽层与器件层之间电压，实现厚埋氧层SOI片与玻璃键合的方法。
|
| 关 键 词： | 绝缘体上的硅 阳极键合 埋氧层 键合电压 |
Effect of BOX and AI on SOI and Glass Anodic Bonding |
| |
| ZHENG Zhi-xia.Effect of BOX and AI on SOI and Glass Anodic Bonding[J].Journal of Putian College,2012(5):70-74. |
| |
| Authors: | ZHENG Zhi-xia |
| |
| Institution: | ZHENG Zhi-xia ( Electronic ＆ Information Engineering Department, Putian University, Putian Fujian 351100, China ) |
| |
| Abstract: | The experimental process and phenomena ammeter was used to measure the bonding current. It the bonding current and bonding wave spreading were. of SOl and Pyrex glass bonding were presented. An was found that the thicker the BOX was, the weaker Bonding current and bonding rate would be increased by raising the bonding voltage. Lots of bonding experiments were done to prove the influence of A1 in the SOl/glass bonding. The reasons for this phenomenon were analyzed and the relational formula of the electrostatic force with BOX thickness and bonding voltage was figured out. It was discussed that by connecting a probe electrode from the anode to SO1 device layer, the voltage would be raised and the method of thick-layer buried oxide SOl and glass bonding would be implemented. |
| |
| Keywords: | SOI anodic bonding buried oxide bonding voltage |
| 本文献已被 维普 等数据库收录！ |
