| 砷化镓光导开关中流注890 nm辐射的光致电离效应 |
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| 引用本文： | 刘鸿,郑理,杨洪军,戴松晖,王晓茜.砷化镓光导开关中流注890 nm辐射的光致电离效应[J].成都大学学报(自然科学版),2013,32(3):247-249. |
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| 作者姓名： | 刘鸿 郑理 杨洪军 戴松晖 王晓茜 |
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| 作者单位： | 成都大学电子信息工程学院,四川成都,610106;成都工业学院机电工程系,四川成都,611730 |
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| 基金项目： | 四川省应用基础研究计划 |
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| 摘 要： | 分析了高增益砷化镓光导开关中流注一端波长890 nm自发辐射的光致电离效应,导出了砷化镓光导开关中流注顶部波长890 nm自发辐射在吸收区域产生的载流子密度分布规律.计算结果表明,紧邻流注顶部处的光生载流子密度最大,波长890 nm自发辐射产生的最大载流子密度比流注内平均载流子密度至少小3个数量级.
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| 关 键 词： | 光电子学 砷化镓光导开关 流注 光致电离效应 |
Photoionization Effects of 890 nm Radiation from Streamer in Gallium Arsenide Photoconductive Semiconductor Switches (PCSS) |
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| LIU Hong
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ZHENG Li
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YANG Hongjun
,
DAI Songhui
,
WANG Xiaoqian.Photoionization Effects of 890 nm Radiation from Streamer in Gallium Arsenide Photoconductive Semiconductor Switches (PCSS)[J].Journal of Chengdu University (Natural Science),2013,32(3):247-249. |
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| Authors: | LIU Hong ZHENG Li YANG Hongjun DAI Songhui WANG Xiaoqian |
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| Institution: | 1 (I. School of Electronic and Information Engineering, Chengdu University, Chengdu 610106, China; 2. Department of Electrical and Mechanical Engineering, Chengdu Technolocal University, Chengdu 611730, China) |
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| Abstract: | In this paper,we analyze the photoionization effects of 890 nrn radiation from the streamer in high gain gallium arsenide （GaAs） photoconductive semiconductor switches （PCSS）. The distribution law of the carrier density from 890 nm radiation at the tip of the streamer in the absorption region is deduced. The re- sults of the calculation show that the photogenerated carrier which is close to the tip of the streamer has the maximum density, and the maximum density of photogenerated carrier is at least 3 orders of magnitude lower than the average density of carrier inside the streamer. |
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| Keywords: | optoelectronics GaAseffectphotoconductive semiconductor switch（PCSS） streamer photoionization |
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