| Properties and Morphology of TiN Films Deposited by Atomic Layer Deposition |
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| 作者姓名： | Siyi Xie Jian Cai Qian Wang Lu Wang and Ziyu Liu |
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| 摘 要： | In this study,TiN films were deposited on SiO2 substrates by Atomic Layer Deposition(ALD) using TiCl4and NH3 as precursors. Properties and morphology of the TiN films were characterized by different methods.Using Grazing Incidence X-Ray Diffraction(GIXRD),TiN films demonstrated polycrystalline structure with(111)preferred orientation. Film thickness was measured by Spectroscopic Ellipsometry(SE) and a stable growth rate of 0.0178 nm/cycle was reached after 500 deposition cycles,which was consistent with the essence of ALD as a surface-saturated self-limiting reaction. Film resistivity measured by a four-point probe continuously decreased with increasing deposition cycles until it reached the minimum value of 300μΩ cm at 5000 deposition cycles with a thickness of 87.04 nm. The surface roughness and morphology of the TiN films at different deposition cycles ranging from 50 to 400 were analyzed by Atomic Force Microscopy(AFM). The AFM results indicated that the initial film growth follows the Stranski-Krastanov mode.
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| 关 键 词： | 原子层沉积 TiN薄膜 薄膜形貌 掠入射X射线衍射 表面粗糙度 制备 性能 二氧化硅衬底 |
Properties and Morphology of TiN Films Deposited by Atomic Layer Deposition |
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| Siyi Xie,Jian Cai,Qian Wang,Lu Wang,and Ziyu Liu.Properties and Morphology of TiN Films Deposited by Atomic Layer Deposition[J].Tsinghua Science and Technology,2014(2):144-149. |
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| Authors: | Siyi Xie Jian Cai Qian Wang Lu Wang Ziyu Liu |
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| Institution: | [1]with the Institute of Microelectronics, Tsinghua University, Beijing 100084, China. [2]with both the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China. |
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| Abstract: | atomic layer deposition titanium nitride morphology |
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| Keywords: | atomic layer deposition titanium nitride morphology |
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