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ILT Approach for Compensating 3-D Mask Effects
Authors:XIONG Wei  ZHANG Jinyu  Min-Chun Tsai  WANG Yan  YU Zhiping Tsinghua National Laboratory for Information Science  Technology
Abstract:As mask features scale to smaller dimensions,the so-called "3-D mask effects" which have mostly been neglected before,become important.This paper properly models the 3-D thick mask effects,and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results.Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94,and this approach gives improved accuracy and faster results than existing methods.
Keywords:inverse lithography technique (ILT)  3-D mask effect  simulated annealing
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