| 多孔硅光电特性及其应用 |
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| 引用本文： | 马丽珍,刘红军,郭芳侠.多孔硅光电特性及其应用[J].陕西师范大学学报,1999,27(4):54-56. |
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| 作者姓名： | 马丽珍 刘红军 郭芳侠 |
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| 作者单位： | 陕西师范大学物理学系!陕西西安710062 |
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| 摘 要： | 通过对金属铝、多孔硅及单晶硅样品在无光照和有光照两种不同条件下I-U特性的测试,研究了多孔硅光电特性及其应用.结果表明,多孔硅(PS)具有高的电阻率和敏感的光学特性
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| 关 键 词： | 多孔硅 MOS系统 光开关 |
| 文章编号： | 1001-3857(1999)04-0054-03 |
| 修稿时间： | 1999-01-04 |
Characteristics of photo-electric of porous silicon and its application |
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| MA Li zhen,LIU Hong jun,GUO Fang xia,LI Yong fang.Characteristics of photo-electric of porous silicon and its application[J].Journal of Shaanxi Normal University: Nat Sci Ed,1999,27(4):54-56. |
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| Authors: | MA Li zhen LIU Hong jun GUO Fang xia LI Yong fang |
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| Abstract: | The I-U curve of Al/PS/Si structure under different conditions are studied, the results show that porous silicon has very high resistive and very sensitive optics features; based on the characteristics, the photo switch will be designed. |
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| Keywords: | porous silicon MOS system photo switch |
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