应用于成像系统的高矢高透镜阵列制备

在移动掩模光刻技术的基础上,本文提出一种可用于成像系统的高矢高透镜阵列制备的二次光刻方法。二次光刻分别用于减小抗蚀剂表面粗糙度和借助移动掩模光刻制备高矢高透镜阵列。通过这种方法,我们成功制备了矢高254 mm的透镜阵列。透镜矢高约为传统移动掩模光刻技术制备透镜阵列矢高的二倍。进而,制备的透镜阵列被用于集成成像系统,获得了高质量的三维图像。这一结果很好的证明了该种二次光刻方法可用于成像系统高矢高透镜阵列的制备,具有较好的应用前景。

Fabrication of high relief depth lens array used on imaging systems

Based on the moving mask lithography, we propose a two-time lithographic approach to achieve high-performance lens array used on integral imaging. The first lithography is used to smooth the undulation of the thick resist and the second lithography is used to fabricate lens array via moving mask lithography method. By this method, the lens array with relief depth of 254 mm, which is about two times of that fabricated by conventional method, can be achieved. Furthermore, the lens array is used on integral imaging systems and vivid three-dimension image is achieved. It is well demonstrated that the two-time lithography has great potential on the fabrication of high-performance lens array, which can be applied on imaging systems.