Zn基ZnO纳米棒阵列的制备和发光特性

N2H4.H2O水热体系中,在Zn基底上制备出了ZnO纳米棒薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FESEM)及发致发光谱(PL)等分析测试手段,研究了ZnO薄膜的形貌结构和发光特性。结果表明,预处理工艺不同,Zn基底表面状态不同,ZnO薄膜形貌也不同。在经预氧化形核的Zn基底上易于制备ZnO纳米棒薄膜。在单一取向的Zn基面上,易于制备ZnO纳米棒阵列。PL测试分析表明,ZnO纳米棒有强的近带边紫外光发射峰和弱的缺陷发射峰。阵列棒本征发射峰强度最高、缺陷峰最弱,反映了该ZnO纳米棒结晶质量高。

Preparation and Photoluminescence Properties of ZnO Nanorod arrays

ZnO nanorod array were prepared on zinc substrate by N2H4·H2O hydrothermal method.The morphologies of as-synthesized ZnO were investigated by X-ray diffraction(XRD) and field emission scanning electron microcopy(FESEM),and the photoluminescence properties of ZnO films were analysed the photoluminescence(PL) spectrocpy.The results show that the pretreatment processes led to various surface states of zinc substrates,and various morphologies of ZnO film.ZnO nanorod array are successfull prepared on zinc substrate by the preoxidation nucleation and ZnO nanorods array can be obtained on the single orientation zinc sustrate.PL test analysis show that ZnO nanorods has the strong near band edge UV emission peak and weak defect emission peak;and the rods array have the highest intrinsic emission peak and the weakest defect peak,which reflectes the high crystallization quality array rods.