基于UV光照射在硅片表面活化的阳极键合工艺研究

为了减少阳极键合试验时Si片和Pyrex玻璃片的键合困难,提高硅片表面活性和键合质量,在阳极键合的表面预处理工艺中引进UV光对硅片的活化并对其工艺参数和效果进行评估。基于阳极键合实验的基本流程,采用对比实验,探究UV光对硅片的照射与否,以及对硅片照射的时间长短对硅片表面的影响,并利用大恒图像系列数字摄像机、单轴拉伸测试仪分别对UV光照射前后硅片的活化效果和键合强度进行了测试与表征。结果表明经过该UV光源适当4 min时间照射的硅片,其表面的亲水键合活化能得到很大提高,可以显著地改善键合片的表面状况。验证了该工艺在阳极键合的预处理方法上的可行性和有效性。

Research on anodic bonding process based on UV light irradiation on the surface of silicon wafer

In order to reduce the difficult of anodic bonding experiment when Si and Pyrex glass bonding to improve the quality of silicon wafer surface activity and bonding,the uv activation of silicon wafers was employed in the surface pretreatment process of anodic bonding and its technical parameters and effect were evaluate. Based on the basic process of anodic bonding experiment, the contrast experiment was used to explore the irradiation of UV light on it or not and the length of time as well as to the silicon irradiation effects on the surface of silicon wafer.The image series digital camera and the uniaxial tensile tester of silicon wafers were used to exam the activation effect before or after UV irradiation and teste the bonding strength. Results show that after the UV light source appropriate 4 min time exposure of silicon wafers, the hydrophilic bonding on the surface of the activation energy was greatly improved and the bonding surface condition was also significantly improved. Therefore the pretreatment method of this technology in the anodic bonding is feasible and effective.