基底温度对Ti/TiN薄膜内应力的影响研究

摘要：采用反应直流磁控溅射法，在硅基底上制备了一系列不同结构的Ti/TiN多层薄膜。采用X射线衍射仪（XRD）对薄膜物相进行了分析，研究了溅射沉积过程中基底温度对周期薄膜结构及内应力的影响.结果表明：多层薄膜中的Ti出现（101）面，TiN的（200）面衍射峰强度在基底温度为600℃时为最高。随着衬底温度的升高，薄膜内部的压应力逐渐减小，当基底温度在600℃时，薄膜内应力最小。

Effect of the Substrate Temperature on The Intra-stress of Ti/TiN Multilayer Films

A series of Ti/TiN multilayer films was deposited on Si substrates by DC reactive magnetron sputtering process.The object-image and surface morphology of the films were analysed by X-ray diffraction(XRD).The influence of the sputtering substrate temperature on the intra-stress of the Ti / TiN multilayer films was studied.The results show that: There was a Ti(100) in the multilayer films,when the substrate temperature is 600 ℃,the intensity of the TiN(200) was the strongest.According to the research,the intra-stress in the film decreases as the temperature increases.The intra-stress of Ti / TiN multilayer films reaches the minimum value when the substrate temperature is 600 ℃.