| 硅基场发射阴极材料研究进展 |
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| 引用本文： | 富笑男,李新建.硅基场发射阴极材料研究进展[J].科学技术与工程,2005,5(3):165-173. |
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| 作者姓名： | 富笑男 李新建 |
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| 作者单位： | 郑州大学物理系,材料物理教育部重点实验室,郑州,450052;河南工业大学数理系,郑州,450052;郑州大学物理系,材料物理教育部重点实验室,郑州,450052 |
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| 基金项目： | 河南省自然科学基金(411011800)和教育部骨干教师基金资助 |
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| 摘 要： | 场发射显示技术在原理上具有多种优越性能,可能在未来平板显示技术中居主导地位。硅基场发射阴极易于与其周边驱动电路实现集成,因而更具有明显的开发前景。在综述硅基场发射阴极材料最新研究进展的基础上,就其所面临的问题、可能的解决方案和未来的发展趋势做出了评述。
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| 关 键 词： | 硅基场致发射阴极材料 硅尖锥形阴极阵列 场发射 |
| 修稿时间： | 2004年10月25 |
Research Progress on Silicon-based Field Emission Cathode Materials |
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| FU Xiaonan,LI Xinjian.Research Progress on Silicon-based Field Emission Cathode Materials[J].Science Technology and Engineering,2005,5(3):165-173. |
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| Authors: | FU Xiaonan LI Xinjian |
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| Abstract: | Due to its many-sided, principle-originated preeminent natures, the field emission technique probably predominates over the field of flat panel display in the future. Among all of the field emission cathodes, the silicon-based field emission cathode has been hoped much because of its easily-realized integration with the surrounding drive circuits. Based on summarizing the recent progress of silicon-based field emission cathode materials, a review on the facing problems, the possible solutions, and the development tendency in the future are presented. |
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| Keywords: | silicon-based field emission cathode materials silicon-based tip-cathode array field emission |
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