3C—SiC晶体薄膜的退火特性及其光荧光

采用HFCVD技术，通过两步CVD生长法，以CH4＋SiH4＋H2混合气体为生长源气，在Si衬底上生长3C－SiC晶体薄膜。对所制备的样品薄膜在氮气气氛中分别采取了快速退火和慢速退火处理，并对退火前后的样品进行了光荧光（PL）分析。结果显示，未经退火处理的样品其PL谱为一覆盖整个可见光区域展宽光谱线，主峰位置在520nm附近；经快速退火处理后样品的PL谱在450nm位置附近出现了又一较强峰，再经慢速退火处理后此峰基本消失，但室温PL峰发生红移。比较结果说明快速退火处理极易给3C－SiC晶体薄膜造成应力损伤。

The Anneal Behaviors of 3C-SiC Thin Films and Their Photoluminescence

The 3C SiC film has been deposited on Si substrate via two step HFCVD method with SiH 4 CH 4 H 2 mixed gases as source gases. The prepared crystal thin film is treated with the fast annealing and slow annealing in N 2 atmosphere conditions. The samples before and after annealings are analyzed by the photoluminescence. The results indicate that PL spectra of samples without anneal treatment are the broadening luminous spectrum lines covering the whole visible area, whose main peak position is near 520 nm, while PL spectra of samples with fast anneal treatment show a strong peak near 450 nm position; and the peak is found to disappear after the slow anneal re treatment, but PL peak at room temperature occurs to have a red shift. The comparative results indicate that the fast anneal treatment is easy to cause the stress damage to the thin film samples.