| 沉积电位对ZnO薄膜结构及光电性能的影响 |
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| 引用本文： | 孙兆奇,徐凯,杨蕾,石市委,张苗,宋学萍.沉积电位对ZnO薄膜结构及光电性能的影响[J].安徽大学学报(自然科学版),2013(2). |
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| 作者姓名： | 孙兆奇 徐凯 杨蕾 石市委 张苗 宋学萍 |
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| 作者单位： | 安徽大学物理与材料科学学院; |
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| 基金项目： | 国家自然科学基金资助项目(51272001,51072001);教育部留学归国人员中央部门专项基金资助项目 |
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| 摘 要： | 以硝酸锌溶液为电解液,采用电化学沉积方法,在导电玻璃(ITO)上制备ZnO薄膜.使用X射线衍射仪、扫描电子显微镜对制备的ZnO薄膜结构和形貌进行表征,并研究薄膜的光电性能.结果表明,通过该方法制备的ZnO具有标准的六方纤锌矿纳米柱状结构,沉积电位为-0.75、-0.80、-0.85 V时,制备的ZnO纳米柱的直径分别为250、400、500 nm,禁带宽度分别为3.12、3.27、3.29 eV,光电流密度分别为1.18、1.07、0.89μA.cm-2.
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| 关 键 词： | ZnO薄膜 电沉积 沉积电位 禁带宽度 光电性能 |
Influence of deposition potential on structure and optoelectronic properties of ZnO thin films |
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| Abstract: | ZnO thin films were prepared by cayhodic electrochemic deposition method on ITO substrate,the Zn(NO3)2 solution was used as electrolyte.The ZnO thin films were characterized by X-ray diffraction and scanning electron microscopy,the optoelectronic properties of ZnO thin films were studied.The results showed that the ZnO thin films were nanorod with wurtzite structure.When the deposition voltages were-0.75,-0.80,-0.85 V,the band gap and the photocurrent density of the ZnO thin films were 3.12,3.27,3.29 eV and 1.18,1.07,0.89 μA·cm-2,respectively. |
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| Keywords: | ZnO thin films electrodeposition deposition potential band gap optoelectronic property |
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