| 高温、高压LDMOS导通电阻的特性 |
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| 引用本文： | 陈军宁,柯导明,朱德智.高温、高压LDMOS导通电阻的特性[J].安徽大学学报(自然科学版),2002,26(4):63-68. |
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| 作者姓名： | 陈军宁 柯导明 朱德智 |
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| 作者单位： | 安徽大学,计算机科学与信息工程学院,安徽,合肥,230039 |
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| 基金项目： | 安徽省自然科学基金;01042104; |
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| 摘 要： | 本文提出了高温、高压LDMOS的等效电路,讨论了LDMOS泄漏电流及其本征参数在高温下随温度变化的规律.根据分析,漏pn结的反向泄漏电流决定了LDMOS的高温极限温度,导通电阻与温度的关系为Ron∝((T)/(T1))y(y=1.5～2.5).
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| 关 键 词： | LDMOS 导通电阻 等效电路 |
| 文章编号： | 1000-2162(2002)04-0063-06 |
Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures |
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| CHEN Jun-ning,KE Dao-ming,ZHU De-zhi.Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures[J].Journal of Anhui University(Natural Sciences),2002,26(4):63-68. |
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| Authors: | CHEN Jun-ning KE Dao-ming ZHU De-zhi |
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| Abstract: | The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures, and analyzes performance of leakage current and intrinsic parameters for an LDMOS at very high temperatures. It may be concluded that the maximal applied temperature of an LDMOS is determined by the reverse leakage current of a pn junction across gate and drain and the relationship between on-resistance and temperature is R on ∝(T T 1SX)) y(y=1.5～2.5). |
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| Keywords: | high voltage LDMOS on-resistance high temperature circuit |
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