| 膜厚对柔性ZnO∶Ga透明导电薄膜结构和电学性能的影响 |
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| 引用本文： | 袁玉珍,吴晓丽.膜厚对柔性ZnO∶Ga透明导电薄膜结构和电学性能的影响[J].山东理工大学学报,2012(3):10-13. |
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| 作者姓名： | 袁玉珍 吴晓丽 |
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| 作者单位： | 山东理工大学理学院;山东理工大学材料科学与工程学院 |
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| 基金项目： | 山东省自然科学基金资助项目(ZR2009AL017) |
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| 摘 要： | 室温下采用直流磁控溅射法在PI衬底上制备出具有优异光学性能的ZnO∶Ga透明导电薄膜.研究结果表明,制备了具有C轴择优取向的六角纤锌矿结构的多晶GZO透明导电薄膜.讨论了薄膜厚度对PI衬底上制备ZnO∶Ga薄膜的结构、表面形貌和电学性质的影响.实验数据表明,一定同质缓冲层可有效降低薄膜应力,改善薄膜性能,所得GZO薄膜厚度为129nm时,电阻率具有最小值3.2×10-4Ω.cm.
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| 关 键 词： | ZnO∶Ga PI 柔性衬底 直流磁控溅射 透明导电薄膜 电学性能 |
Dependence of film thickness on structure and electrical property of ZnO∶Ga flexible transparent conducting thin films |
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| YUAN Yu-Zhen,WU Xiao-li.Dependence of film thickness on structure and electrical property of ZnO∶Ga flexible transparent conducting thin films[J].Journal of Shandong University of Technology:Science and Technology,2012(3):10-13. |
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| Authors: | YUAN Yu-Zhen WU Xiao-li |
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| Institution: | 1.School of Science,Shandong University of Technology,Zibo 255091,China 2.School of Materials Science and Engineering,Shandong University of Technology,Zibo 255091,China) |
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| Abstract: | Transparent conducting Ga-doped ZnO(ZnO∶Ga) thin films with very low resistivity were successfully prepared on ZnO-buffered Polyimide(PI) by DC magnetron sputtering at room temperature.The effects of the thickness and flexible substrate on crystal structure、surface morphology and electrical property of the films were studied in detail.In this work,the results reveal the lowest resistivity can achieved at 3.2×10-4Ω·cm when deposition thickness is 129nm. |
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| Keywords: | ZnO∶Ga PI flexible substrate DC magnetron sputtering transparent conducting film electrical property |
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