| 多孔硅及其分形特性研究 |
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| 引用本文： | 刘刚,介晓瑞,谢基凡,陈萍丽.多孔硅及其分形特性研究[J].华中科技大学学报(自然科学版),1996(6). |
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| 作者姓名： | 刘刚 介晓瑞 谢基凡 陈萍丽 |
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| 作者单位： | 固体电子学系 |
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| 摘 要： | 利用阳极氧化技术制备了多种多孔硅（ＰＳ）样品，测出其结构参数，并摄得相应的ＳＥＭ微观形貌图片．针对多孔硅的结构特点，确立相应的离散分形布朗随机增量（ＤＦＢＩＲ）场模型，应用图像处理方法，求出不同ＰＳ微观图像的分形参数．发现了ＰＳ结构参数和分形参数的内在联系与规律性，为ＰＳ的定量化研究提出了新的方法
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| 关 键 词： | 多孔硅 分形特性 离散分形布朗随机增量场模型 |
Porous Silicon and Its Fractal Characteristic |
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| Liu Gang Dept. of Solid State Electronics,HUST,Wuhan ,China. Jie Xiaorui Xie Jifan Chen Pingli.Porous Silicon and Its Fractal Characteristic[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(6). |
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| Authors: | Liu Gang Dept of Solid State Electronics HUST Wuhan China Jie Xiaorui Xie Jifan Chen Pingli |
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| Institution: | Liu Gang Dept. of Solid State Electronics,HUST,Wuhan 430074,China. Jie Xiaorui Xie Jifan Chen Pingli |
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| Abstract: | A variety of porous silicon (PS) samples have been prepared using the anodic oxidation technology. The structure parameters have been measured and the microscopic morphology observed by SEM has been photographed. In accordance with the structural feature of PS, a discrete fractal Brown random incremental field model is developed. The image processing method is used to find the fractal parameters of various PS images. The internal relationships between PS structure parameters and fractal parameters are found. |
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| Keywords: | porous silicon fractal characteristic DFBIR model |
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