| 半导体中载流子漂移速度与任意场强的一种解析关系 |
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| 引用本文： | 马稚尧,史济群.半导体中载流子漂移速度与任意场强的一种解析关系[J].华中科技大学学报(自然科学版),1987(3). |
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| 作者姓名： | 马稚尧 史济群 |
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| 作者单位： | 华中工学院固体电子学系
(马稚尧)，华中工学院固体电子学系(史济群) |
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| 摘 要： | 本文考虑在单谷能带半导体中,均恒电场对载流子分布函数的影响,采用平均自由程与载流子能量分布为玻耳兹曼分布的假设,在此基础上作相应的非简并态的经典统计,得到任意场强下漂移速度的极为简洁的_d(ε)表达式.该表达式对应的_d(ε)曲线与已知的精密测量的实验曲线吻合良好.
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| 关 键 词： | 半导体材料 载流子 漂移速度 势场 平均自由程 迁移率 |
Analytical Dependance of Drift Velocity of Carriers on Arbitrary Electric Field in Semiconductors |
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| Ma Zhiyao Shi Jiqui.Analytical Dependance of Drift Velocity of Carriers on Arbitrary Electric Field in Semiconductors[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1987(3). |
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| Authors: | Ma Zhiyao Shi Jiqui |
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| Institution: | Ma Zhiyao Shi Jiqui |
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| Abstract: | The effect of a uniform electric field upon the distribution function of carriers in a single energy valley semiconductor is discussed. By using the concept of mcan free path and assuming that the carriers follow the Boltzmann distribution and taking into account the classical statistics of non-degenerated carriers, a concise expression for a drift velocity under arbitrary electric field has been derived. The curve for this expression agrees very well with that from known experiments. |
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| Keywords: | Semiconductor material Carrier Drift velocity Potential field Mean free patb Mobility |
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