| 铋钼单晶的制备和输运性质的研究 |
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| 引用本文： | 卢德新,熊锐,杨晓菲,徐则川.铋钼单晶的制备和输运性质的研究[J].华中科技大学学报(自然科学版),1998(10). |
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| 作者姓名： | 卢德新 熊锐 杨晓菲 徐则川 |
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| 作者单位： | 华中理工大学电子科学与技术系 |
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| 基金项目： | 华中理工大学青年基金资助项目 |
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| 摘 要： | 以高纯度的Ｂｉ２Ｏ３和ＭｏＯ３为原料，采用电化学方法制备了高质量紫红色Ｂｉ－Ｍｏ－Ｏ单晶，并研究了其输运性质．发现Ｂｉ－Ｍｏ－Ｏ单晶为半导体材料，其电阻随温度的变化可用公式Ｒ＝Ｒ０ｅｘｐ［Ｅａ／（２ｋＢＴ）］来描述；Ｉ－Ｖ特性的测量表明，Ｂｉ－Ｍｏ－Ｏ单晶中存在着一个阈值场，当外场低于阈值场时，材料呈现欧姆特性，高于阈值场时，单晶呈现出很强的非线性特征．
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| 关 键 词： | 铋钼青铜 电化学 非线性输运 |
The Growth of Single Crystal of Bismuth Molybdenum Oxide and Its Electric Transport |
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| Lu Dexin,Assoc. Prof., Dept. of Electronic Sci. & Tech.,HUST,Wuhan ,China. Xiong Rui,Yang Xiaofei,Xu Zechuan.The Growth of Single Crystal of Bismuth Molybdenum Oxide and Its Electric Transport[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1998(10). |
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| Authors: | Lu Dexin Assoc Prof Dept of Electronic Sci & Tech HUST Wuhan China Xiong Rui Yang Xiaofei Xu Zechuan |
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| Institution: | Lu Dexin,Assoc. Prof., Dept. of Electronic Sci. & Tech.,HUST,Wuhan 430074,China. Xiong Rui,Yang Xiaofei,Xu Zechuan |
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| Abstract: | By making use of the electrolytic reduction of the molten salt of Bi2O3-MoO3, single crystal of bismuth molybdenum oxide was successfully grown with large side and high quality. The electrical resistance is measured over the temperature range 120-300 K. The sample performs semiconducting behavior, fitting the expression R=R0expEa/(2kBT)] quite well and the thermal activation energy Ea being nearly equal to 0.30 eV. The I-V characteristic measurement was also carried out in room tem- perature. The results show that there exist a threshold field (VT). If V is below the field, the I-V characteristic is linear. Drastic nonlinear phenomena were observed when V is over the threshold field. |
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| Keywords: | bismuth molybdenum bronze electrolytic reduction nonlinear transport |
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