| TiAlN 保护膜的制备及结构研究 |
| |
| 引用本文： | 胡作启,李佐宜,熊锐,徐瑛.TiAlN 保护膜的制备及结构研究[J].华中科技大学学报(自然科学版),1998(4). |
| |
| 作者姓名： | 胡作启 李佐宜 熊锐 徐瑛 |
| |
| 作者单位： | 华中理工大学电子科学与技术系 |
| |
| 摘 要： | 用反应磁控溅射方法制备了ＴｉＡｌＮ薄膜，结构分析表明，当Ｔｉ的含量小于０．２５时，ＴｉＡｌＮ薄膜是Ａｌ基氮化物的闪锌矿结构，但晶格常数随Ｔｉ原子含量的增加而增大．Ｘ射线光电子能谱分析表明，ＴｉＡｌＮ薄膜有与ＡｌＮ和ＴｉＮ不同的电子结构特征．
|
| 关 键 词： | TiAlN薄膜 结构 X射线光电子能谱 |
Research on Preparation and Structure of TiAlN Protect Thin Films |
| |
| Hu Zuoqi Dr., Dept. of Electronics Sci. & Tech.,HUST,Wuhan ,China. Li Zuoyi Xiong Rui Xu Ying.Research on Preparation and Structure of TiAlN Protect Thin Films[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1998(4). |
| |
| Authors: | Hu Zuoqi Dr Dept of Electronics Sci & Tech HUST Wuhan China Li Zuoyi Xiong Rui Xu Ying |
| |
| Institution: | Hu Zuoqi Dr., Dept. of Electronics Sci. & Tech.,HUST,Wuhan 430074,China. Li Zuoyi Xiong Rui Xu Ying |
| |
| Abstract: | TiAlN films were prepared by reactive magnetron sputtering. By means of structural analyses, it is concluded that TiAlN films exhibit sphalerite structure of Al based nitrides when the content of Ti is <0.25 and the crystalline constant increases with increasing content of Ti. X ray photoelectron spectroscopy studies reveal that different electronic structural characteristics exist between AlN films and TiN films. |
| |
| Keywords: | TiAlN thin film structure X ray photoelectron spectroscopy |
| 本文献已被 CNKI 等数据库收录！ |
