| BCN非晶电性的实验研究 |
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| 引用本文： | 陈万金,孙颖,华中,李海波.BCN非晶电性的实验研究[J].盐城工学院学报(自然科学版),2001,14(1):43-44,47. |
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| 作者姓名： | 陈万金 孙颖 华中 李海波 |
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| 作者单位： | 四平师范学院,辽宁,四平,136000 |
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| 摘 要： | 以六方BN和石墨粉为原料，通过机械球磨的方法制备出非晶BCN粉，在1470K，10^-5 Torr的条件下，对非晶BCN粉进行烧结，获得了块状非晶BCN化合物，对其电导率测量的结果表明：在从室温到560K范围内，它属于半导体，能隙为0．11ev，在560K-740K内，它属于半金属。
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| 关 键 词： | BCN 非晶电性 实验研究 非晶半导体 半金属 石墨 半导体 硼-碳-氮化合物 |
| 文章编号： | 1008-5092(2001)01-0043-02 |
Experimental Investigation on the Conductivity of the Amorphous BCN |
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| CHEN Wan-jin,SUN Ying,HUA Zhong,LI Hai-bo.Experimental Investigation on the Conductivity of the Amorphous BCN[J].Journal of Yancheng Institute of Technology(Natural Science Edition),2001,14(1):43-44,47. |
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| Authors: | CHEN Wan-jin SUN Ying HUA Zhong LI Hai-bo |
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| Institution: | Siping Normal College, liaoning Siping 136000,China |
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| Abstract: | Amorphous BCN powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting material. A bulk amorphous BCN compound was produced by sintering the asmilled amorphous BCN powders in a vacuum of 10-5 Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BCN cmpound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K. |
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| Keywords: | amorphous semiconductor semimetal BCN |
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