| 干涉增强喇曼散射技术及其应用 |
| |
| 引用本文： | 刘洪图,金澍,赵特秀,吴志强,许振嘉.干涉增强喇曼散射技术及其应用[J].中国科学技术大学学报,1988(1). |
| |
| 作者姓名： | 刘洪图 金澍 赵特秀 吴志强 许振嘉 |
| |
| 作者单位： | 中国科学技术大学
(刘洪图，金澍，赵特秀，吴志强)，中国科学院半导体所(许振嘉) |
| |
| 摘 要： | 详细介绍了干涉增强喇曼散射技术及其样品构形设计的计算方法,同时给出了利用该技术对a-Si:H释氢及金属诱导晶化的研究结果。
|
| 关 键 词： | 干涉增强喇曼散射 样品构形设计 释氢 金属诱导晶化 |
The Techeique of Interference Enhanced Raman Scattering and Its Applications |
| |
| Liu Hongtu,Jin Shu,Zhao Texiu,Wu Ziqiang,Hsu Chenchia University of Science and Technology of China Institute of Semiconductor,Sinica Academia.The Techeique of Interference Enhanced Raman Scattering and Its Applications[J].Journal of University of Science and Technology of China,1988(1). |
| |
| Authors: | Liu Hongtu Jin Shu Zhao Texiu Wu Ziqiang Hsu Chenchia University of Science and Technology of China Institute of Semiconductor Sinica Academia |
| |
| Abstract: | We demonstrate the technique of interference enhanced Raman scatteringand the computational method for the design of its sample configuration. Bymeans of the new technique we studied the outdiffusion of hygrogen in andthe metal induced crystallization of a-Si:H |
| |
| Keywords: | Interference enhanced Raman scattering design of sample configuration hydrogen outdiffusion metal Induced crystallization |
| 本文献已被 CNKI 等数据库收录！ |
