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基于MOSFET亚微秒固态调制器技术的试验研究
引用本文:王相綦,冯德仁,何宁,郝浩,徐玉存,赵枫,尚雷.基于MOSFET亚微秒固态调制器技术的试验研究[J].中国科学技术大学学报,2007,37(1):99-103.
作者姓名:王相綦  冯德仁  何宁  郝浩  徐玉存  赵枫  尚雷
作者单位:中国科学技术大学国家同步辐射实验室,安徽合肥,230029
摘    要:报道了以高速MOSFET作开关进行的亚微秒强流刚管调制器技术的相关试验研究.试验中以电容作储能器件,感应叠加方式作为输出,并采用特殊的几何形状屏蔽结构,成功调试出了平顶为70 ns、上升与下降沿20 ns、重复频率20~24 kHz可调变、输出最大脉冲电流40 A的小型固态刚管调制器试验装置.

关 键 词:固态调制器  梯形波  感应叠加  屏蔽结构
文章编号:0253-2778(2007)01-0099-05
修稿时间:2006-08-042006-12-05

Test principle research for solid-state modulator technique with sub-micro second based on MOSFETs
WANG Xiang-qi,FENG De-ren,HE Ning,HAO Hao,XU Yu-chen,ZHAO Feng,SHANG Lei.Test principle research for solid-state modulator technique with sub-micro second based on MOSFETs[J].Journal of University of Science and Technology of China,2007,37(1):99-103.
Authors:WANG Xiang-qi  FENG De-ren  HE Ning  HAO Hao  XU Yu-chen  ZHAO Feng  SHANG Lei
Institution:National Synchrotron Radiation laboratory ,USTC , Hefei 230029
Abstract:The test research of solid-state modulator principle employing high-speed MOSFET switches and inductive-adder output was presented.Capacitors were used for storing energy as well as shield configuration with special geometrical shapes.A testing set of the small solid-state modulator was completed with 40 A of the maximum current pulse output,70 nanoseconds of pulse flat-top length and 20 nanoseconds of pulse rise time and 20~24 kHz of the adjustable repetition rate.
Keywords:solid-state modulator  trapezoid-wave  inductive-adder  shield configuration
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