| 高优值P型(BiXSb1-X)2Te3热电材料的优化制备工艺 |
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| 引用本文： | 顾永明,郭燕明.高优值P型(BiXSb1-X)2Te3热电材料的优化制备工艺[J].上海大学学报(自然科学版),1999,5(3):241-244. |
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| 作者姓名： | 顾永明 郭燕明 |
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| 作者单位： | 上海大学材料科学与工程学院 |
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| 摘 要： | 根据影响 P型 (Bi XSb1 - X) 2 Te3半导体热电材料优值系数的主要因素和大量实验结果 ,采用高纯原料、筛选配方、慢速区熔长晶及退火等优化工艺 ,在晶锭的相当长的范围内获得了晶体结构完整、热电性能均匀、优值系数高达 3.46的半导体热电材料
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| 关 键 词： | P型热电材料 高优值 优化制备工艺 |
The Optimizing Preparation Technology of the High Merit Figure P-type(BiXSb1-X)2Te3 Thermoelectric Materials |
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| Gu Yongming,Guo Yanming.The Optimizing Preparation Technology of the High Merit Figure P-type(BiXSb1-X)2Te3 Thermoelectric Materials[J].Journal of Shanghai University(Natural Science),1999,5(3):241-244. |
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| Authors: | Gu Yongming Guo Yanming |
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| Abstract: | On the basis of the factors influencing merit figure of p type(Bi X Sb 1 X ) 2Te 3 semiconductor thermoelectric materials and a lot of experiment data, taking optimizing technology of crystal growth, including using high purity law materials, selecting optimum formulations, by lower speed zone refining and post annealing for crystals, we have obtained the thermoelectric material with a high merit figure up to 3.46 with high degree of crystal structure perfection and homogeneous thermoelectric properties over a considerable rang of crystal ingot length. |
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| Keywords: | p type thermoelectric materials high merit figure optimizing preparation technology |
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