| p-i-n型非晶硅薄膜电池p层材料制备及光学性能研究 |
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| 引用本文： | 汪沁,郭涛,张峰,李伟.p-i-n型非晶硅薄膜电池p层材料制备及光学性能研究[J].大连理工大学学报,2011,51(Z1):1-4. |
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| 作者姓名： | 汪沁 郭涛 张峰 李伟 |
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| 作者单位： | 电子科技大学光电信息学院;电子科技大学电子薄膜与集成器件国家重点实验室; |
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| 基金项目： | 教育部重点实验室资助项目(J2009JBPY003); 国家大学生创新性实验计划资助项目(091061424) |
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| 摘 要： | 采用射频等离子体增强化学气相沉积(RF-PECVD)方法制备非化学计量比氢化非晶碳化硅(a-SiC:H)薄膜材料,借助紫外可见(UV-Vis)光谱、激光拉曼(Raman)光谱和傅里叶变换红外(FTIR)光谱等手段,研究了p-i-n型非晶硅(a-Si:H)薄膜太阳能电池p层a-SiC:H薄膜材料的制备与光学性能.研究结果表明甲烷和硅烷掺杂比能影响a-Si:H薄膜成键情况,而射频功率一定程度上能影响薄膜沉积速率,该研究结果可为制备转换效率高、性能稳定的p-i-n型非晶硅薄膜太阳能电池提供支持.
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| 关 键 词： | RF-PECVD 氢化非晶碳化硅薄膜 非化学计量比 微观结构 光学带隙 |
Fabrication and optical properties of p-type layer in p-i-n film cells based on amorphous silicon |
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| WANG Qin,GUO Tao,ZHANG Feng,LI Wei.Fabrication and optical properties of p-type layer in p-i-n film cells based on amorphous silicon[J].Journal of Dalian University of Technology,2011,51(Z1):1-4. |
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| Authors: | WANG Qin GUO Tao ZHANG Feng LI Wei |
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| Institution: | WANG Qin*1,GUO Tao1,ZHANG Feng1,LI Wei21.School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China,2.State Key Laboratory of Electronic Thin Films and Integrated Devices |
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| Abstract: | Non-stoichiometry hydrogenated amorphous silicon carbide(a-SiC:H) thin films were deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD).The fabrication and optical properties of p-type layer in p-i-n film cells based on amorphous silicon were investigated by means of ultraviolet-visible(UV-Vis),laser Raman and Fourier transform infrared(FTIR) spectroscopy,respectively.The results show that CH4 and SiH4 flow ratios can affect the bonding of a-SiC:H thin film,and radio-frequency pow... |
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| Keywords: | RF-PECVD a-SiC:H thin film non-stoichiometry microstructure optical band gap |
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