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氧分压对IWO薄膜表面形貌及光电性能的影响
引用本文:张远鹏,王文文,秦诗瑶,于蕾.氧分压对IWO薄膜表面形貌及光电性能的影响[J].大连理工大学学报,2011,51(Z1):5-8.
作者姓名:张远鹏  王文文  秦诗瑶  于蕾
作者单位:北京航空航天大学物理科学与核能工程学院;
基金项目:国家大学生创新性实验计划资助项目(091000650); 国家自然科学基金资助项目(重点项目50902006)
摘    要:掺钨氧化铟(In2O3:W,IWO)薄膜是一种新型的透明导电氧化物(TCO)薄膜,其中W与In之间存在着较高的价态差,使得IWO薄膜与其他TCO薄膜相比,在相同的电阻率条件下具有载流子浓度低、迁移率高和近红外区透射率高的特点.利用直流磁控溅射法制备了IWO薄膜,利用X射线衍射、扫描电子显微镜、霍尔效应及分光光度计表征了薄膜的表面形貌及光电性能.在工作压力1 Pa、氧分压为2.4×10-1Pa的条件下,实验中制备的IWO薄膜最佳电阻率为6.3×10-4Ω.cm,最高载流子迁移率为34 cm2V-1s-1,载流子浓度达到2.9×1020cm-3,可见光平均透射率约为85%,近红外平均透射率大于80%.

关 键 词:IWO薄膜  直流磁控溅射  氧分压  表面形貌  光电性能

Influence of oxygen partial pressure on surface morphology, electrical and optical properties of IWO film
ZHANG Yuan-peng,WANG Wen-wen,QIN Shi-yao,YU Lei.Influence of oxygen partial pressure on surface morphology, electrical and optical properties of IWO film[J].Journal of Dalian University of Technology,2011,51(Z1):5-8.
Authors:ZHANG Yuan-peng  WANG Wen-wen  QIN Shi-yao  YU Lei
Institution:ZHANG Yuan-peng*,WANG Wen-wen,QIN Shi-yao,YU LeiSchool of Physics and Nuclear Energy Engineering,Beijing University of Aeronautics and Astronautics,Beijing 100191,China
Abstract:Tungsten doped In2O3(In2O3:W,IWO) film is a new kind of transparent conductive oxide(TCO) film in which W is doped with high valence.Compared with other TCO films,the low carrier concentration,high carrier mobility and the transmittance in the near-infrared band of IWO films are achieved under the condition of the same resistivity.Direct current magnetron sputtering method was used to prepare IWO films.The X-ray diffraction,scanning electron microscopy were used to determine the lattice structure and morpho...
Keywords:IWO film  direct current magnetron sputtering  oxygen partial pressure  surface morphology  electrical and optical properties  
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