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退火温度对ZnO薄膜晶体管电特性的影响
引用本文:刘玉荣,任力飞,杨任花,韩静,姚若河,温智超,徐海红,许佳雄.退火温度对ZnO薄膜晶体管电特性的影响[J].华南理工大学学报(自然科学版),2011,39(9):103-107.
作者姓名:刘玉荣  任力飞  杨任花  韩静  姚若河  温智超  徐海红  许佳雄
作者单位:1. 华南理工大学电子与信息学院,广东广州510640;华南理工大学广东省短距离无线探测与通信重点实验室,广东广州 510640
2. 华南理工大学电子与信息学院,广东广州,510640
3. 华南理工大学物理系,广东广州,510640
基金项目:国家自然科学基金资助项目(61076113); 广东省自然科学基金资助项目(8451064101000257); 华南理工大学中央高校基本科研业务费专项资金资助项目(2011ZM0027); 广东省大学生创新实验项目(S1010561035)
摘    要:针对非晶硅和有机薄膜晶体管的低迁移率问题,以高纯Zn为靶材,反应磁控溅射沉积、且在不同温度下退火的ZnO薄膜作为半导体活性层,成功地制备出基于ZnO材料的薄膜晶体管(ZnO-TFT),研究了退火温度对ZnO -TFT电特性的影响.结果表明:ZnO- TFT的载流子迁移率随退火温度的升高而明显增大,700℃退火的样品迁移...

关 键 词:薄膜晶体管  氧化锌  电特性  退火温度

Effects of Annealing Temperature on Electrical Properties of ZnO Thin-Film Transistors
Liu Yu-rong,Ren Li-fei,Yang Ren-hua,Han Jing,Yao Ruo-he,Wen Zhi-chao,Xu Hai-hong,Xu Jia-Xiong.Effects of Annealing Temperature on Electrical Properties of ZnO Thin-Film Transistors[J].Journal of South China University of Technology(Natural Science Edition),2011,39(9):103-107.
Authors:Liu Yu-rong  Ren Li-fei  Yang Ren-hua  Han Jing  Yao Ruo-he  Wen Zhi-chao  Xu Hai-hong  Xu Jia-Xiong
Institution:Liu Yu-rong1,2 Ren Li-fei1 Yang Ren-hua1 Han Jing1 Yao Ruo-he1,2 Wen Zhi-chao1 Xu Hai-hong3 Xu Jia-Xiong1(1.School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China,2.Guangdong Key Laboratory of Short-Range Wireless Detection and Communication,3.Department of Physics,China)
Abstract:Aiming at the low mobilities of the thin film transistors respectively based on amorphous silicon and organic semiconductor,ZnO thin-film transistors(ZnO-TFTs) were successfully prepared by means of the reactive magnetron sputtering from a high-purity Zn metal target,with the ZnO thin-films annealed at different temperatures as the active layer.The effects of the annealing temperature on the electrical properties of the ZnO-TFTs were investigated.The results show that the carrier mobility of the ZnO-TFTs ob...
Keywords:thin film transistors  zinc oxide  electrical properties  annealing temperature  
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