| 半导体量子阱中施主杂质态研究 |
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| 引用本文： | 贺卫国,蔡敏,阮文英.半导体量子阱中施主杂质态研究[J].华南理工大学学报(自然科学版),2001,29(12):31-33. |
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| 作者姓名： | 贺卫国 蔡敏 阮文英 |
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| 作者单位： | 华南理工大学,应用物理系, |
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| 基金项目： | 国家自然资金资助项目 (19875 0 18) |
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| 摘 要： | 半导体量子阱的杂质离子可以位于量子阱的中心或偏离中心一定的距离d，本文用打靶法求解薛定谔方程，研究施主杂质的能谱随d的变化，发现具有相同角动量的能态具有相似的变化规律。
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| 关 键 词： | 量子阱 施主杂质态 龙格－库塔法 半导体 薛定谔方程 能级 能谱 |
| 文章编号： | 1000-565X(2001)12-0031-03 |
Donor States in Semiconductor Quantum Wells |
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| He Wei_guo,Cai Min,Ruan Wen_ying.Donor States in Semiconductor Quantum Wells[J].Journal of South China University of Technology(Natural Science Edition),2001,29(12):31-33. |
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| Authors: | He Wei_guo Cai Min Ruan Wen_ying |
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| Abstract: | Impurity ions in semiconductor quantum well can be located either at the center of the quantum well or off the center with a distance d . In this paper, a shooting method is used to solve the Schrodinger equation and the variation of the energy spectrum against d is analyzed. It is found that eigenstates with the same angular momentum show similar pattern of variation. |
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| Keywords: | quantum well impurity state Runge_Kutta method |
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