Electron Tunneling from the 〈100〉 and 〈111〉 Oriented Si into the Ultrathin Rapid Thermal Nitrided SiO2 Films

用卤素-钨灯作辐射热源快速热氮化(RTN)，在〈100〉和〈111〉晶向Si衬底上制备了SiSiOxNyAl电容，并测量了由低场到FN隧穿电场范围的电子从N型Si积累层到超薄SiOxNy膜的电流传输特性.测量结果说明，两种不同晶向的低场漏电流没有多大区别，而在高场范围对〈100〉晶向电容结构的FN隧穿电流要比〈111〉晶向电容结构的FN隧穿电流显著增加，并对实验结果作了初步讨论.

Electron Tunneling from the 〈100〉 and 〈111〉 Oriented Si into the Ultrathin Rapid Thermal Nitrided SiO2 Films

The Si SiOxNy Al capacitors have been fabricated on both 〈100〉and 〈111〉oriented Si substrates by the tungsten halogen lamps thermal RTN. The electron current transporting from the n type Si accumulation layer into the SiOxNy ultrathin films has been measured in both the lower electric field region and the F N region. It is shown that in the lower field region the leakage current has no difference between both crystal orientations. In the higher field region, however, the F N tunneling current is increased more markedly in 〈100〉 oriented capacitor than in 〈111〉 oriented capacitor. The results have been discussed preliminarily in this paper.