首页 | 本学科首页   官方微博 | 高级检索  
     检索      

垂直外腔面发射激光器的模拟分析
引用本文:倪演海,戴特力,梁一平,杜亮,伍喻
.垂直外腔面发射激光器的模拟分析[J].重庆师范大学学报(自然科学版),2011,28(1):55-59.
作者姓名:倪演海  戴特力  梁一平  杜亮  伍喻
作者单位:重庆师范大学,物理与电子工程学院,重庆市高校光学工程重点实验室,重庆,400047
基金项目:重庆市高校光学工程重点实验室重点项目
摘    要:垂直外腔面发射激光器芯片的生长工艺要求精确到nm量级,制作成本高,有必要用软件对设计好的VECSEL芯片进行仿真,实现优化.通过PICS3D软件对已经设计好的一个底发射的VECSEL芯片结构进行仿真,获得了量子阱有源区的带隙结构、材料增益曲线及子腔谐振谱线等特性.结果表明,InGaAs/GaAsP/AlGaAs材料体系...

关 键 词:C42+分子  电声耦合  Td对称性  哈密顿量  杨-泰勒畸变  能级分裂

Simulation and Analysis of Vertical-external-cavity Surface-emitting Laser
NI Yan-hai,DAI Te-li,LIANG Yi-ping,DU Liang,WU Yu
.Simulation and Analysis of Vertical-external-cavity Surface-emitting Laser
[J].Journal of Chongqing Normal University:Natural Science Edition,2011,28(1):55-59.
Authors:NI Yan-hai  DAI Te-li  LIANG Yi-ping  DU Liang  WU Yu
Institution:NI Yan-hai,DAI Te-li,LIANG Yi-ping,DU Liang,WU Yu(Optical Engineering Key Lab.of Chongqing City,College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 400047,China)
Abstract:The vertical external cavity surface emitting lasers(VECSELs) require a rigorous facture art from a chip that has been grown in MBE or MOCVD that possess the nm precision and is expensive.It's necessary to firstly simulate the operation of a chip designed in order to get the key parameters and then time after time optimize the structure designing until they are grew.The designed bottom-emitting VECSEL structure was simulated by using pics3d sofeware and the properties of quantum well active region such as b...
Keywords:vertical external cavity surface emitting lasers(VECSEL)  optical pump  multiple quantum well(MQW)  resonate periodic gain(RPG)  
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《重庆师范大学学报(自然科学版)》浏览原始摘要信息
点击此处可从《重庆师范大学学报(自然科学版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号