Al-N 共掺杂p 型ZnO 薄膜制备及电学性能的研究

利用射频磁控溅射技术在石英玻璃上制备了ZnO:Al薄膜,继而N离子注入实现薄膜的Al-N共掺杂,随后进行了不同温度和时间的热处理。并借助X射线衍射(XRD)、霍耳测试(Hall)、X射线光电能谱仪(XPS)等手段对ZnO薄膜的性能进行了表征。实验结果表明,Al-N共掺杂ZnO薄膜在578℃退火8 min表现出较稳定的p型导电,其载流子数高达1×1018～6×1018个·cm-3,对应的电阻率为1～9Ω·cm,迁移率为1～2 cm2·V-1·s-1。与单掺N相比,实现p型导电所需的退火温度有明显降低,这很可能与Al的掺入有关。此外,XPS测试结果证实大量的Ni取代O空位是薄膜p型导电的根本原因。

Preparation and Characteristics Research of Al-N Codoped P-type ZnO Films

Al-N codoped ZnO thin films on quartz glass substrates can be fabricated by using radio frequency magnetron sputtering technique and then by combining with N-implantation.The effects of thermal annealing on the structure and electrical properties of ZnO films are investigated by x-ray diffraction(XRD),Hall measurements system and x-ray photoelectron spectroscopy(XPS).The experimental results suggest that the film annealed for 8 min at 578 ℃ exhibits the optimal p-type electrical properties with hole concentration of 1×1018~6×1018 cm-3,low resistivity of about 1~9 Ω·cm,and hall mobility of 1~2 cm2·V-1·s-1.Compared with the monodoping N,the annealing temperature for realizing the p-type conductivity decreases significantly owing to the incorporation of Al.Additionally,the substitution of the O vacancy for N is the origin of p conductivity of N-Al codoped ZnO films by analysis of XPS.