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应变SrTiO_3/GaAs异质结的整流特性研究
引用本文:杨万里,陈晓伟,高玉婷,李杨,王严,翟章印. 应变SrTiO_3/GaAs异质结的整流特性研究[J]. 淮阴师范学院学报(自然科学版), 2014, 0(1): 44-47
作者姓名:杨万里  陈晓伟  高玉婷  李杨  王严  翟章印
作者单位:淮阴师范学院物理与电子电气工程学院,江苏淮安223300
基金项目:国家自然科学基金项目(10979017);江苏省高校自然科学基金项目(11KJB140001);江苏省大学生实践创新训练计划项目(2012JSSPITP2492)
摘    要:采用脉冲激光沉积法在P型GaAs基片上制备了缺氧的钛SrTiO3薄膜.X射线衍射测量证明SrTiO3薄膜外延生长.I-V曲线测量显示很好的整流性,说明该SrTiO3薄膜与GaAs形成p-n结.该结的电输运机制为应变导致的隧穿电流,且其电输运性质不受光照影响.

关 键 词:SrTiO  GaAs  p-n结  整流性

Rectifying Properties of Strained SrTiO3/GaAs Heterojunctions
YANG Wan-li,CHEN Xiao-wei,GAO Yu-ting,LI Yang,WANG Yan,ZHAI Zhang-yin. Rectifying Properties of Strained SrTiO3/GaAs Heterojunctions[J]. Journal of Huaiyin Teachers College(Natrual Science Edition), 2014, 0(1): 44-47
Authors:YANG Wan-li  CHEN Xiao-wei  GAO Yu-ting  LI Yang  WANG Yan  ZHAI Zhang-yin
Affiliation:(School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian Jiangsu 223300, China)
Abstract:We have prepared oxygen-deficient SrTiO3 films on p-GaAs substrates using pulsed laser deposi- tion. X-ray diffraction measurements showed that SrTiO3 thin films were epitaxially grown. The I-V curves showed good rectifying properties, indicating that a p-n junction formed between SrTiO3 films and GaAs interface. The electrical transport mechanism of the junction should be strain induced tunneling current. The electrical transport properties were not affected by illumination.
Keywords:SrTiO3  GaAs  p-n junction  rectifying properties
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