| 应变SrTiO_3/GaAs异质结的整流特性研究 |
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| 引用本文： | 杨万里,陈晓伟,高玉婷,李杨,王严,翟章印. 应变SrTiO_3/GaAs异质结的整流特性研究[J]. 淮阴师范学院学报(自然科学版), 2014, 0(1): 44-47 |
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| 作者姓名： | 杨万里 陈晓伟 高玉婷 李杨 王严 翟章印 |
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| 作者单位： | 淮阴师范学院物理与电子电气工程学院,江苏淮安223300 |
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| 基金项目： | 国家自然科学基金项目（10979017）;江苏省高校自然科学基金项目（11KJB140001）;江苏省大学生实践创新训练计划项目（2012JSSPITP2492） |
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| 摘 要： | 采用脉冲激光沉积法在P型GaAs基片上制备了缺氧的钛SrTiO3薄膜.X射线衍射测量证明SrTiO3薄膜外延生长.I-V曲线测量显示很好的整流性,说明该SrTiO3薄膜与GaAs形成p-n结.该结的电输运机制为应变导致的隧穿电流,且其电输运性质不受光照影响.
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| 关 键 词： | SrTiO GaAs p-n结 整流性 |
Rectifying Properties of Strained SrTiO3/GaAs Heterojunctions |
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| YANG Wan-li,CHEN Xiao-wei,GAO Yu-ting,LI Yang,WANG Yan,ZHAI Zhang-yin. Rectifying Properties of Strained SrTiO3/GaAs Heterojunctions[J]. Journal of Huaiyin Teachers College(Natrual Science Edition), 2014, 0(1): 44-47 |
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| Authors: | YANG Wan-li CHEN Xiao-wei GAO Yu-ting LI Yang WANG Yan ZHAI Zhang-yin |
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| Affiliation: | (School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian Jiangsu 223300, China) |
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| Abstract: | We have prepared oxygen-deficient SrTiO3 films on p-GaAs substrates using pulsed laser deposi- tion. X-ray diffraction measurements showed that SrTiO3 thin films were epitaxially grown. The I-V curves showed good rectifying properties, indicating that a p-n junction formed between SrTiO3 films and GaAs interface. The electrical transport mechanism of the junction should be strain induced tunneling current. The electrical transport properties were not affected by illumination. |
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| Keywords: | SrTiO3 GaAs p-n junction rectifying properties |
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