蒲公英状氧化镓纳米线的制备与表征

在1 200℃对Ga2O3粉末和Au覆盖的Si(111)基片加热不同时间,利用热蒸发法制备Ga2O3纳米线。实验中我们发现了一个新的成核过程,用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对样品进行了结构、形貌的表征。SEM显示,在整个样品表面形成大量直径约200~300 nm的蒲公英状纳米线。能量色散谱(EDS)显示,样品为纯净的Ga2O3。由分析可知,生长时间对样品的形态和微观结构有一定的影响。最后,简要讨论了这种奇特结构的生长机制。

Preparation and characterization of dandelion-like Ga2O3 nanowires

We prepared Ga2O3 nanowires by heating Ga2O3 powder and Au-coated Si（111） substrates at 1 200℃ with different time. We discovered a new nucleation process in this experiment. We further characterized the structure and appearance of the nanowires by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and X- Ray Diffraction （XRD）. Large number of dandelion-like Ga2O3 nanowires with diameters of about 200 - 330 nm formed on entire surface of those substrates which was observed by SEM. Energy-dispersive spectrometry （EDS） based observation shows that the products are pure Ga2O3. Experimental results reveal that growth time impacts their morphology and microstructure. We eventually address their growth mechanism.