基于多孔硅的Hg~(2+)荧光化学传感器

通过电化学腐蚀的方法制备发橙色荧光的多孔硅,采用荧光光谱和透射电镜对制备的多孔硅进行表征.结果表明,其在空气中放置时,荧光会逐渐降低,直至完全消失.进一步对其透射电镜图片进行分析认为,令其发光的根本原因是多孔硅内部存在着单晶的硅晶粒.通过热反应和光反应两种方法在多孔硅表面引入Hg2+识别基团,得到多孔硅化学传感器S1和S2.二者均可实现对Hg2+的选择性识别.

Mercury Ion Fluorescence Chemosensors Based on Porous Silicon

Porous silicon with orange fluorescence was prepared by chemical etching method. The porous silicon particles were characterized by fluorescence spectrum and transmission electron microscopy( TEM). The results showed that the fluorescence intensity was gradually decreased until vanishing after exposed in air for more than one week. The fluorescence luminescence was attributed to the existing of single crystal silicon in the porous silicon. The Hg2 +recognition groups were introduced to the surface of porous silicon through thermal reaction and photoreaction forming two chemosensors S1 and S2. Mercury ion could be recognized selectively.