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一种低噪声高增益CMOS混频器设计
引用本文:高丽娜,庞建丽.一种低噪声高增益CMOS混频器设计[J].信阳师范学院学报(自然科学版),2014(3):413-416.
作者姓名:高丽娜  庞建丽
作者单位:1. 黄淮学院 国际学院,河南驻马店,463000
2. 黄淮学院 信息工程学院,河南驻马店,463000
基金项目:河南省科技发展计划科技攻关项目
摘    要:基于TSMC 0.18μm CMOS工艺,设计了一种低噪声、高增益的混频器.通过在吉尔伯特单元中的跨导级处引入噪声抵消技术以降低混频器的噪声,并且在开关管的源级增加电流注入电路以减小本振端的偏置电流,增大电路的增益.仿真结果表明,混频器工作电压为1.8 V,直流电流为9.9 mA,在本振(LO)频率为2.39 GHz,射频(RF)频率为2.4 GHz时,混频器的增益为12.65 dB,双边带噪声系数为4.23 dB,输入三阶交调点为-3.45 dBm.

关 键 词:CMOS混频器  电流注入  噪声抵消  高增益  低噪声

The Design of a Low-noise and High-gain CMOS Mixer
Gao Linaa,Pang Jianlib.The Design of a Low-noise and High-gain CMOS Mixer[J].Journal of Xinyang Teachers College(Natural Science Edition),2014(3):413-416.
Authors:Gao Linaa  Pang Jianlib
Institution:Gao Lina;Pang Jianli;International College,Huanghuai University;College of Information Engineering,Huanghuai University;
Abstract:Based on TSMC 0. 18 μm CMOS technology,a low-noise and high-gain mixer was designed. The mixer has a Gilbert cell configuration that employs low-noise transconductors designed using noise-cancelling technique. The current-bleeding technique was also used so that a high-gain can be achieved. Simulation results indicated that the mixer exhibits a conversion gain of 12. 65 dB,a double-sideband noise figure of 4. 23 dB,a third-order intermodulation intercept point of-3. 45 dBm with a consumption of 9. 9 mA at 1. 8V when the local-oscillator( LO) frequency is 2. 39GHz and the radio-frequency frequency is 2. 4 GHz.
Keywords:CMOS mixer  current bleeding  noise cancellation  high-gain  low-noise
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