首页 | 本学科首页   官方微博 | 高级检索  
     检索      

PMOS—FET栅氧电荷动态行为的计算机模拟
引用本文:张永恩,李惠军,马瑞芬,张保财.PMOS—FET栅氧电荷动态行为的计算机模拟[J].山东大学学报(理学版),1995(3).
作者姓名:张永恩  李惠军  马瑞芬  张保财
作者单位:山东工业大学电子系,济南半导体研究所
摘    要:分析了绝缘栅PMOS—FET结构的工艺及器件模拟数据,获得了衬底电阻车在8~15Ω·cm范围内变化时与MOS结构阈值电压之间的定量关系.模拟结果与实验现象相一致.同时,定量地描述了在常规偏压条件下栅氧层中表面电荷的分布及行为,揭示出阈值电压随衬底掺杂浓度的变化而发生变化的体效应机理.

关 键 词:场效应  阈值电压  工艺模拟  半导体器件模拟

A COMPUTER SIMULATE FOR THE P-MOS-FET GRID OXIDE CHARGES DYNAMICS ACTION
Zhang Yongen.A COMPUTER SIMULATE FOR THE P-MOS-FET GRID OXIDE CHARGES DYNAMICS ACTION[J].Journal of Shandong University,1995(3).
Authors:Zhang Yongen
Abstract:The covering-grid PMOS-FET structure simulated by technique and device was analysed and researched. In the quantitative relation between ubstrates resistivity(Ins-15. CM range)and MOS structure threshold value, One date and test phenomenon was gotten. At the same time,distribution of grid oxide surface charges at the routine Partial voltage condition was described quantitatively. revealing mechanism of this effect.
Keywords:field effect  threshold value  technique simulate  semiconductor device simulate  
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号