| Mg掺杂对GaN薄膜紫外光电导的影响 |
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| 引用本文： | 刘云燕,张德恒.Mg掺杂对GaN薄膜紫外光电导的影响[J].山东大学学报(理学版),2001,36(2):184-189. |
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| 作者姓名： | 刘云燕 张德恒 |
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| 作者单位： | 山东大学物理系, |
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| 基金项目： | 山东省自然科学基金资助项目(Y96A12016) |
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| 摘 要： | 报道了用MOCVD方法制备的不同Mg掺杂浓度的GaN薄膜的紫外光电导特性.结果表明,没有进行Mg掺杂和弱掺杂的样品具有显著的光响应,而且光响应弛豫时间也较短,随着Mg掺杂浓度的增加,材料变成P型,光响应变小,且弛豫时间变长.
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| 关 键 词： | GaN 掺杂 光电导 光响应 |
| 文章编号： | 0559-7234(2001)02-0184-06 |
| 修稿时间： | 2000年12月21 |
EFFECTS OF Mg DOPING ON UV PHOTOCONDUCTIVITY PROPERTIES FOR GaN FILMS DEPOSITED BY MOCVD |
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| ZHANG De heng,LIU Yun yan.EFFECTS OF Mg DOPING ON UV PHOTOCONDUCTIVITY PROPERTIES FOR GaN FILMS DEPOSITED BY MOCVD[J].Journal of Shandong University,2001,36(2):184-189. |
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| Authors: | ZHANG De heng LIU Yun yan |
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| Abstract: | It is presented that the UV photoconductivity properties for GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and week doped GaN samples the UV photoresponse was relatively large and the relax time was relatively week. As increasing the doped Mg concentration and the samples became P type, photoresponse became week and the relax time became long. |
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| Keywords: | GaN doping photoconductivity photoresponse |
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