| 聚苯胺修饰电极的研究 |
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| 引用本文： | 李国铮,王士勋.聚苯胺修饰电极的研究[J].山东大学学报(理学版),1986(3). |
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| 作者姓名： | 李国铮 王士勋 |
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| 作者单位： | 山东大学化学系
(李国铮)，山东大学化学系(王士勋) |
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| 基金项目： | 中国科学院科学基金资助的课题 |
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| 摘 要： | 讨论了用电化学聚合法在铂、玻碳以及在p 型和n 型外延硅电极上生成聚苯胺膜的条件、膜的电活性与其变色性之间的关系。在有铂溅射薄层的n~+/p—Si光阳极上、膜的附着性较牢固、它使光阳极的稳定性得到改进。
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| 关 键 词： | n—Si聚苯胺 高聚物修饰 高聚物膜 n 型硅的保护 |
THE INVESTIGATION OF POLYANILINE MODIFIED ELECTRODES |
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| Li Guozheng and Wang Shixun.THE INVESTIGATION OF POLYANILINE MODIFIED ELECTRODES[J].Journal of Shandong University,1986(3). |
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| Authors: | Li Guozheng and Wang Shixun |
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| Institution: | Li Guozheng and Wang Shixun |
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| Abstract: | The conditions of generated polyaniline film on platinum,glass car-bon and epitaxial silicon electrodes by using electrochemical polymericmethod and the relationship between electroactive and electrochromaticproperties for this film are discussed.Aniline film adherence at n~+/p-Siphotoanodes with Pt spettering layer is better than that at bare n~+/p-Si.It enhances the stability of photoanodes. |
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| Keywords: | n-Si polyaniline polymer modification polymer film protect of n-type silicon |
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