界面二氧化硅层对二极管辅助硅基磁电阻效应影响的研究

本文制备了二极管辅助的晶体硅磁阻(magnetoresistance,MR)器件,研究了界面二氧化硅层的磁阻放大作用及器件在硅基磁电子器件中的可能应用.通过有与无二氧化硅层的实验对比,发现引入二氧化硅层后器件的磁阻在室温和1.2T磁场下达到了527%,磁阻性能提升了76%以上.通过对无磁场作用下伏安特性的测量,证明了氧化硅层的引入增加了界面电阻,通过等效电路分析,对相关机理进行了讨论.这项工作将为硅基磁电子器件的可能应用提供一种新的方法.

Influence of Interface Silicon Dioxide Layer on Diode Assisted Magnetoresistance in Silicon

We have manufactured a diode--assisted silicon--based magnetoresistance（MR） device. The influ- ence of interface silica on magnetoresistance is studied. It is found that the introduction of the silica effectively enhanced the MR effect. The MR can be achieved to about 527% at 1.2 T at room temperature, which increased nearly 76% relative to the samples without silicon dioxide layer. I--V test for the samples without magnetic field showed the interface contact resistance was increased remarkably with the insert of silica, which led to the increase of the MR accordingly. This work may open a new way for the practical application of the silicon--based magnetoresistance devices.